Jay Cheng

Expertise
Semiconductor Processing, Charged Particle Optics, Photonics, Material Characterization and Wide Bandgap Semiconductor.

Education
University of Cincinnati, Ph.D. Electrical Engineering.
Tsinghua University, M.S. Material Science.
Tsinghua University, B.S. Material Science.

Publications and Patent
‘Focused ion beam fabricated microgratings for integrated optics applications’ J. Cheng and A. J. Steckl. IEEE J. Selected Topics in Quantum Electronics, 8(6), Nov/Dec, 2002.

‘Focused ion beam micromachining of diffraction gratings on an arbitrary angled facet’ J. Cheng and A. J. Steckl. US patent pending.

‘Mg-Ga liquid metal ion source for implantation-doping of GaN’ J. Cheng and A. J. Steckl. J. Vac. Sci. Technol. B 19(6), Nov/Dec, 2001.

‘High-density Er-implanted GaN optical memory devices’ Coauthors: B. K. Lee, C. J. Chi, L. C. Chao, I. Chyr, F. R. Beyette, and A. J. Steckl. Applied Optics, 40 (21), 2001.

‘Rare earth focused ion beam implantation utilizing Er and Pr liquid alloy ion sources’ Coauthors: L. C. Chao, B. K. Lee, C. J. Chi, I. Chyr, and A. J. Steckl. J. Vac. Sci. Technol. B 17 (6), 1999.

‘Upconversion luminescence of Er-implanted GaN films by focused-ion-beam direct write’ Coauthors: L. C. Chao, B. K. Lee, C. J. Chi, I. Chyr, and A. J. Steckl. Applied Physics Letters, 75 (13), 1999.

Presentations
Photonic applications of FIB technology, for MRL, 2001.
Mg-Ga liquid metal ion source for implantation-doping of GaN, EIPBN, Washington , D.C. 2001.
Etching enhancement of FIB micromachining with gas-assisted etching (GAE) of I₂ and XeF₂ on GaN, EIPBN, Washington , D.C. 2001.